Welcome to Hotenda.com Online Store!

logo
userjoin
Home

JANTXV2N930

JANTXV2N930

JANTXV2N930

Microsemi Corporation

JANTXV2N930 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N930 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/253
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Reference Standard MIL-19500/253H
JESD-30 Code O-MBCY-W3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 300mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10μA 5V
Current - Collector Cutoff (Max) 2nA
Vce Saturation (Max) @ Ib, Ic 1V @ 500μA, 10mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 60V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
128 $14.01227 $1793.57056
JANTXV2N930 Product Details

JANTXV2N930 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10μA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 500μA, 10mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.A maximum collector current of 30mA volts can be achieved.

JANTXV2N930 Features


the DC current gain for this device is 100 @ 10μA 5V
the vce saturation(Max) is 1V @ 500μA, 10mA
a transition frequency of 30MHz

JANTXV2N930 Applications


There are a lot of Microsemi Corporation JANTXV2N930 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News