JANTXV2N930 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N930 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/253
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Reference Standard
MIL-19500/253H
JESD-30 Code
O-MBCY-W3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
300mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
30mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10μA 5V
Current - Collector Cutoff (Max)
2nA
Vce Saturation (Max) @ Ib, Ic
1V @ 500μA, 10mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
60V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
128
$14.01227
$1793.57056
JANTXV2N930 Product Details
JANTXV2N930 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10μA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 500μA, 10mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.A maximum collector current of 30mA volts can be achieved.
JANTXV2N930 Features
the DC current gain for this device is 100 @ 10μA 5V the vce saturation(Max) is 1V @ 500μA, 10mA a transition frequency of 30MHz
JANTXV2N930 Applications
There are a lot of Microsemi Corporation JANTXV2N930 applications of single BJT transistors.