NSS20201MR6T1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 5V.A collector emitter saturation voltage of 150mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 150mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.200MHz is present in the transition frequency.A breakdown input voltage of 20V volts can be used.Collector current can be as low as 2A volts at its maximum.
NSS20201MR6T1G Features
the DC current gain for this device is 200 @ 1A 5V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 200MHz
NSS20201MR6T1G Applications
There are a lot of ON Semiconductor NSS20201MR6T1G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
