MPSW55RLRAG Overview
In this device, the DC current gain is 50 @ 250mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 250mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 4V can result in a high level of efficiency.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 50MHz.Maximum collector currents can be below 500mA volts.
MPSW55RLRAG Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSW55RLRAG Applications
There are a lot of ON Semiconductor MPSW55RLRAG applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
