2SA1576U3HZGT106R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA1576U3HZGT106R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
DUAL
Terminal Form
GULL WING
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Power - Max
200mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 5mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
150mA
Transition Frequency
140MHz
Frequency - Transition
140MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.108360
$0.10836
10
$0.102226
$1.02226
100
$0.096440
$9.644
500
$0.090981
$45.4905
1000
$0.085831
$85.831
2SA1576U3HZGT106R Product Details
2SA1576U3HZGT106R Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 5mA.As you can see, the part has a transition frequency of 140MHz.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
2SA1576U3HZGT106R Features
the DC current gain for this device is 120 @ 1mA 6V the vce saturation(Max) is 500mV @ 5mA, 5mA a transition frequency of 140MHz
2SA1576U3HZGT106R Applications
There are a lot of ROHM Semiconductor 2SA1576U3HZGT106R applications of single BJT transistors.
