MJE271G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1500 @ 120mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 1.2mA, 120mA.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -2A current rating.The part has a transition frequency of 6MHz.Single BJT transistor can be broken down at a voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.

MJE271G Features

the DC current gain for this device is 1500 @ 120mA 10V
the vce saturation(Max) is 3V @ 1.2mA, 120mA
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 6MHz

MJE271G Applications

There are a lot of ON Semiconductor MJE271G applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter