BCP69-25,115 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 500mA 1V.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.There is a breakdown input voltage of 20V volts that it can take.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

BCP69-25,115 Features

the DC current gain for this device is 160 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 40MHz

BCP69-25,115 Applications

There are a lot of Nexperia USA Inc. BCP69-25,115 applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter