2SB1695KT146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SB1695KT146 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1.5A
Frequency
280MHz
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SB1695
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
280MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
370mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
280MHz
Collector Emitter Saturation Voltage
-200mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
-6V
hFE Min
270
Continuous Collector Current
-1.5A
Height
1mm
Length
2.9mm
Width
1.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.063213
$0.063213
500
$0.046480
$23.24
1000
$0.038733
$38.733
2000
$0.035535
$71.07
5000
$0.033210
$166.05
10000
$0.030893
$308.93
15000
$0.029878
$448.17
50000
$0.029378
$1468.9
2SB1695KT146 Product Details
2SB1695KT146 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 100mA 2V.A collector emitter saturation voltage of -200mV ensures maximum design flexibility.A VCE saturation (Max) of 370mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages of -1.5A should be maintained to achieve high efficiency.The base voltage of the emitter can be kept at -6V to achieve high efficiency.The current rating of this fuse is -1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 280MHz is present in the part.The breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 1.5A volts.
2SB1695KT146 Features
the DC current gain for this device is 270 @ 100mA 2V a collector emitter saturation voltage of -200mV the vce saturation(Max) is 370mV @ 50mA, 1A the emitter base voltage is kept at -6V the current rating of this device is -1.5A a transition frequency of 280MHz
2SB1695KT146 Applications
There are a lot of ROHM Semiconductor 2SB1695KT146 applications of single BJT transistors.