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2SB1695KT146

2SB1695KT146

2SB1695KT146

ROHM Semiconductor

2SB1695KT146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1695KT146 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1.5A
Frequency 280MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SB1695
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 280MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 370mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 280MHz
Collector Emitter Saturation Voltage -200mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -6V
hFE Min 270
Continuous Collector Current -1.5A
Height 1mm
Length 2.9mm
Width 1.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.063213 $0.063213
500 $0.046480 $23.24
1000 $0.038733 $38.733
2000 $0.035535 $71.07
5000 $0.033210 $166.05
10000 $0.030893 $308.93
15000 $0.029878 $448.17
50000 $0.029378 $1468.9
2SB1695KT146 Product Details

2SB1695KT146 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 100mA 2V.A collector emitter saturation voltage of -200mV ensures maximum design flexibility.A VCE saturation (Max) of 370mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages of -1.5A should be maintained to achieve high efficiency.The base voltage of the emitter can be kept at -6V to achieve high efficiency.The current rating of this fuse is -1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 280MHz is present in the part.The breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 1.5A volts.

2SB1695KT146 Features


the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 370mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 280MHz

2SB1695KT146 Applications


There are a lot of ROHM Semiconductor 2SB1695KT146 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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