2SB1695KT146 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 100mA 2V.A collector emitter saturation voltage of -200mV ensures maximum design flexibility.A VCE saturation (Max) of 370mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages of -1.5A should be maintained to achieve high efficiency.The base voltage of the emitter can be kept at -6V to achieve high efficiency.The current rating of this fuse is -1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 280MHz is present in the part.The breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 1.5A volts.
2SB1695KT146 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 370mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 280MHz
2SB1695KT146 Applications
There are a lot of ROHM Semiconductor 2SB1695KT146 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
