PBSS302PD,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS302PD,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
110MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
PBSS302P
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.5W
Power - Max
1.1W
Transistor Application
SWITCHING
Gain Bandwidth Product
110MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
175 @ 2A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
450mV @ 600mA, 6A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
110MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
30
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.165920
$11.16592
10
$10.533887
$105.33887
100
$9.937629
$993.7629
500
$9.375122
$4687.561
1000
$8.844454
$8844.454
PBSS302PD,115 Product Details
PBSS302PD,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 175 @ 2A 2V.A VCE saturation (Max) of 450mV @ 600mA, 6A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at -5V for high efficiency.In this part, there is a transition frequency of 110MHz.There is a breakdown input voltage of 40V volts that it can take.In extreme cases, the collector current can be as low as 4A volts.
PBSS302PD,115 Features
the DC current gain for this device is 175 @ 2A 2V the vce saturation(Max) is 450mV @ 600mA, 6A the emitter base voltage is kept at -5V a transition frequency of 110MHz
PBSS302PD,115 Applications
There are a lot of Nexperia USA Inc. PBSS302PD,115 applications of single BJT transistors.