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PBSS302PD,115

PBSS302PD,115

PBSS302PD,115

Nexperia USA Inc.

PBSS302PD,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS302PD,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 110MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PBSS302P
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Power - Max 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 175 @ 2A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 450mV @ 600mA, 6A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 110MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -5V
hFE Min 30
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.165920 $11.16592
10 $10.533887 $105.33887
100 $9.937629 $993.7629
500 $9.375122 $4687.561
1000 $8.844454 $8844.454
PBSS302PD,115 Product Details

PBSS302PD,115 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 175 @ 2A 2V.A VCE saturation (Max) of 450mV @ 600mA, 6A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at -5V for high efficiency.In this part, there is a transition frequency of 110MHz.There is a breakdown input voltage of 40V volts that it can take.In extreme cases, the collector current can be as low as 4A volts.

PBSS302PD,115 Features


the DC current gain for this device is 175 @ 2A 2V
the vce saturation(Max) is 450mV @ 600mA, 6A
the emitter base voltage is kept at -5V
a transition frequency of 110MHz

PBSS302PD,115 Applications


There are a lot of Nexperia USA Inc. PBSS302PD,115 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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