SBC847CLT1G Overview

DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.A constant collector voltage of 100mA is necessary for high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Breakdown input voltage is 45V volts.A maximum collector current of 100mA volts is possible.

SBC847CLT1G Features

the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

SBC847CLT1G Applications

There are a lot of ON Semiconductor SBC847CLT1G applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver