2SD1816T-E Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 5V.A VCE saturation (Max) of 400mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Emitter base voltages of 6V can achieve high levels of efficiency.A transition frequency of 180MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

2SD1816T-E Features

the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz

2SD1816T-E Applications

There are a lot of ON Semiconductor 2SD1816T-E applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting