2SC3837KT146N Overview
This device has a DC current gain of 56 @ 10mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 4mA, 20mA.For high efficiency, the continuous collector voltage must be kept at 50mA.Emitter base voltages of 3V can achieve high levels of efficiency.A transition frequency of 1500MHz is present in the part.Maximum collector currents can be below 50mA volts.
2SC3837KT146N Features
the DC current gain for this device is 56 @ 10mA 10V
the vce saturation(Max) is 500mV @ 4mA, 20mA
the emitter base voltage is kept at 3V
a transition frequency of 1500MHz
2SC3837KT146N Applications
There are a lot of ROHM Semiconductor 2SC3837KT146N applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
