2SD1801S-TL-E Overview

DC current gain in this device equals 100 @ 100mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 150mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 1A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Parts of this part have transition frequencies of 150MHz.Maximum collector currents can be below 2A volts.

2SD1801S-TL-E Features

the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

2SD1801S-TL-E Applications

There are a lot of ON Semiconductor 2SD1801S-TL-E applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface