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SMMBTA56WT1G

SMMBTA56WT1G

SMMBTA56WT1G

ON Semiconductor

SMMBTA56WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SMMBTA56WT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 150mW
Base Part Number MMBTA56
Pin Count 3
Power - Max 150mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 80V
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) 80V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.752986 $1.752986
10 $1.653760 $16.5376
100 $1.560151 $156.0151
500 $1.471841 $735.9205
1000 $1.388529 $1388.529
SMMBTA56WT1G Product Details

SMMBTA56WT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

SMMBTA56WT1G Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA

SMMBTA56WT1G Applications


There are a lot of ON Semiconductor SMMBTA56WT1G applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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