2SCR533PFRAT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR533PFRAT100 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2016
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
500mW
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 50mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
3A
Transition Frequency
320MHz
Frequency - Transition
320MHz
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.323050
$1.32305
10
$1.248160
$12.4816
100
$1.177509
$117.7509
500
$1.110858
$555.429
1000
$1.047979
$1047.979
2SCR533PFRAT100 Product Details
2SCR533PFRAT100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 50mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 50mA, 1A.320MHz is present in the transition frequency.
2SCR533PFRAT100 Features
the DC current gain for this device is 180 @ 50mA 3V the vce saturation(Max) is 350mV @ 50mA, 1A a transition frequency of 320MHz
2SCR533PFRAT100 Applications
There are a lot of ROHM Semiconductor 2SCR533PFRAT100 applications of single BJT transistors.