2SD1918TLQ Overview
DC current gain in this device equals 120 @ 100mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 100mA, 1A.A 1.5A continuous collector voltage is necessary to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.In this part, there is a transition frequency of 80MHz.Breakdown input voltage is 160V volts.Collector current can be as low as 1.5A volts at its maximum.
2SD1918TLQ Features
the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SD1918TLQ Applications
There are a lot of ROHM Semiconductor 2SD1918TLQ applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
