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MJE18004G

MJE18004G

MJE18004G

ON Semiconductor

MJE18004G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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MJE18004G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2004
Series SWITCHMODE™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 450V
Max Power Dissipation 75W
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Frequency 13MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJE18004
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 13MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 450V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 300mA 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 750mV @ 500mA, 2.5A
Collector Emitter Breakdown Voltage 450V
Transition Frequency 13MHz
Collector Emitter Saturation Voltage 920mV
Collector Base Voltage (VCBO) 1kV
Emitter Base Voltage (VEBO) 9V
hFE Min 14
Height 9.28mm
Length 10.28mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.651056 $1.651056
10 $1.557600 $15.576
100 $1.469434 $146.9434
500 $1.386258 $693.129
1000 $1.307791 $1307.791
MJE18004G Product Details

MJE18004G Overview


DC current gain in this device equals 14 @ 300mA 5V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 920mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 500mA, 2.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 13MHz in the part.In extreme cases, the collector current can be as low as 5A volts.

MJE18004G Features


the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 750mV @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 13MHz

MJE18004G Applications


There are a lot of ON Semiconductor MJE18004G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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