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KSP2222ABU

KSP2222ABU

KSP2222ABU

ON Semiconductor

KSP2222ABU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSP2222ABU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 179mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating 600mA
Frequency 300MHz
Base Part Number KSP2222
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Turn Off Time-Max (toff) 285ns
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.27000 $0.27
10 $0.22100 $2.21
100 $0.11780 $11.78
500 $0.07812 $39.06
1,000 $0.05369 $0.05369
KSP2222ABU Product Details

KSP2222ABU Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 600mA for this device.In this part, there is a transition frequency of 300MHz.The breakdown input voltage is 40V volts.When collector current reaches its maximum, it can reach 600mA volts.

KSP2222ABU Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz

KSP2222ABU Applications


There are a lot of ON Semiconductor KSP2222ABU applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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