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BC857BU3HZGT106

  • BC857BU3HZGT106
  • BC857BU3HZGT106

BC857BU3HZGT106

BC857BU3HZGT106

ROHM Semiconductor

BC857BU3HZGT106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

BC857BU3HZGT106 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.367724 $0.367724
10 $0.346910 $3.4691
100 $0.327274 $32.7274
500 $0.308748 $154.374
1000 $0.291272 $291.272
BC857BU3HZGT106 Product Details

BC857BU3HZGT106 Overview


This device has a DC current gain of 210 @ 2mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.This device displays a 45V maximum voltage - Collector Emitter Breakdown.

BC857BU3HZGT106 Features


the DC current gain for this device is 210 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA

BC857BU3HZGT106 Applications


There are a lot of ROHM Semiconductor BC857BU3HZGT106 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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