BC857BU3HZGT106 Overview
This device has a DC current gain of 210 @ 2mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.This device displays a 45V maximum voltage - Collector Emitter Breakdown.
BC857BU3HZGT106 Features
the DC current gain for this device is 210 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
BC857BU3HZGT106 Applications
There are a lot of ROHM Semiconductor BC857BU3HZGT106 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver