QS8J11TCR

new-10%

Manufacturer part number:QS8J11TCR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2P-CH 12V 3.5A TSMT8

Case Package:SOT-23

Datasheet:QS8J11TCR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2015
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	TIN COPPER
Subcategory	Other Transistors
Max Power Dissipation	550mW
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	8
JESD-30 Code	R-PDSO-F8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	550mW
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	43m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	22nC @ 4.5V
Drain to Source Voltage (Vdss)	12V
Continuous Drain Current (ID)	3.5A
Drain-source On Resistance-Max	0.043Ohm
Pulsed Drain Current-Max (IDM)	12A
DS Breakdown Voltage-Min	12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 1.5V Drive
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free