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R6020ANZ8U7C8

R6020ANZ8U7C8

R6020ANZ8U7C8

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 220m Ω @ 10A, 10V ±30V 2.04nF @ 25V 65nC @ 10V 600V TO-3P-3 Full Pack

SOT-23

R6020ANZ8U7C8 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature 150°C
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 120W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 220m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2.04nF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
R6020ANZ8U7C8 Product Details

R6020ANZ8U7C8 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.04nF @ 25V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

R6020ANZ8U7C8 Features


a 600V drain to source voltage (Vdss)


R6020ANZ8U7C8 Applications


There are a lot of ROHM Semiconductor
R6020ANZ8U7C8 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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