SST2907AT116 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.A collector emitter saturation voltage of -1.6V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at -600mA in order to achieve high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -600mA.As a result, the part has a transition frequency of 200MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

SST2907AT116 Features

the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz

SST2907AT116 Applications

There are a lot of ROHM Semiconductor SST2907AT116 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting