2N3772 Description

The 2N3772 is a silicon epitaxial-base NPN transistor mounted in Jedec Jedec TO-3 metal case. The 2N3772 is designed for use in linear amplifiers and inductive switching.

The 2N3772 transistor has a low collector-emitter junction voltage and a forward-biased current break-down capability, among other features. Among its many applications are inductive switching, General Purpose (GP) linear amplifiers, series pas regulators, and a variety of others.

2N3772 Features

• High power NPN silicon power transistors

• Designed for linear amplifiers, series pass regulators, and inductive switching applications

• Forward biased second breakdown current capability IS/b = 2.5A DC at VCE = 60V DC

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• Maximum Collector Power Dissipation (Pc): 150 W

• Maximum Collector-Base Voltage |Vcb|: 100 V

• Maximum Collector-Emitter Voltage |Vce|: 80 V

• Maximum Emitter-Base Voltage |Veb|: 7 V

• Maximum Collector Current |Ic max|: 2 A

• Max. Operating Junction Temperature (Tj): 200 °C

• Transition Frequency (ft): 0.2 MHz

• Forward Current Transfer Ratio (hFE), MIN: 15

2N3772 Applications

• Linear Amplifiers

• Inductive Switching

• Series pas regulators

• Switching small loads

• Darlington pair

• The LED array sequence controller

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