2SA1312GRTE85LF Overview

DC current gain in this device equals 200 @ 2mA 6V, which is the ratio of the base current to the collector current.When VCE saturation is 300mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.In this part, there is a transition frequency of 100MHz.The breakdown input voltage is 120V volts.Maximum collector currents can be below 100mA volts.

2SA1312GRTE85LF Features

the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

2SA1312GRTE85LF Applications

There are a lot of Toshiba Semiconductor and Storage 2SA1312GRTE85LF applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver