TIP102G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
TIP102G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
2W
Peak Reflow Temperature (Cel)
260
Current Rating
8A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
TIP10*
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2.5V @ 80mA, 8A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
200
Height
9.28mm
Length
10.28mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.98000
$0.98
50
$0.81580
$40.79
100
$0.66990
$66.99
500
$0.53416
$267.08
1,000
$0.43170
$0.4317
TIP102G Product Details
TIP102G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 3A 4V.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 80mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.The maximum collector current is 8A volts.
TIP102G Features
the DC current gain for this device is 1000 @ 3A 4V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2.5V @ 80mA, 8A the emitter base voltage is kept at 5V the current rating of this device is 8A a transition frequency of 4MHz
TIP102G Applications
There are a lot of ON Semiconductor TIP102G applications of single BJT transistors.