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SI9407BDY-T1-E3

SI9407BDY-T1-E3

SI9407BDY-T1-E3

Vishay Siliconix

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 120m Ω @ 3.2A, 10V ±20V 600pF @ 30V 22nC @ 10V 60V 8-SOIC (0.154, 3.90mm Width)

SOT-23

SI9407BDY-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Turn On Delay Time 30 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 30V
Current - Continuous Drain (Id) @ 25°C 4.7A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 70ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 3.2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.7A
Drain to Source Breakdown Voltage -60V
Height 1.55mm
Length 5mm
Width 4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.897855 $0.897855
10 $0.847033 $8.47033
100 $0.799088 $79.9088
500 $0.753857 $376.9285
1000 $0.711185 $711.185
SI9407BDY-T1-E3 Product Details

SI9407BDY-T1-E3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 600pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.2A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.4.7A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 40 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SI9407BDY-T1-E3 Features


a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 40 ns
a 60V drain to source voltage (Vdss)


SI9407BDY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI9407BDY-T1-E3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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