STGB10NB37LZT4

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Manufacturer part number:STGB10NB37LZT4

Manufacturer:STMicroelectronics

Description:STGB10NB37LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB10NB37LZT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	VOLTAGE CLAMPING
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	125W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB10
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	125W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	AUTOMOTIVE IGNITION
Rise Time	340ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	440V
Max Collector Current	20A
Collector Emitter Breakdown Voltage	440V
Max Breakdown Voltage	440V
Turn On Time	860 ns
Test Condition	328V, 10A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic	1.8V @ 4.5V, 10A
Turn Off Time-Nom (toff)	17800 ns
Gate Charge	28nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	1.3μs/8μs
Switching Energy	2.4mJ (on), 5mJ (off)
Gate-Emitter Thr Voltage-Max	2.4V
Height	4.6mm
Length	10.4mm
Width	9.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free