STGB15M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGB15M65DF2 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
30 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
136W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGB15
Input Type
Standard
Power - Max
136W
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
30A
Reverse Recovery Time
142 ns
Collector Emitter Breakdown Voltage
650V
Max Breakdown Voltage
650V
Test Condition
400V, 15A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 15A
IGBT Type
Trench Field Stop
Gate Charge
45nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
24ns/93ns
Switching Energy
90μJ (on), 450μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.186120
$4.18612
10
$3.949170
$39.4917
100
$3.725632
$372.5632
500
$3.514747
$1757.3735
1000
$3.315799
$3315.799
STGB15M65DF2 Product Details
STGB15M65DF2 Description
STGB15M65DF2, part of the M series IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It is able to provide high efficiency for applications requiring low-loss and short-circuit functionality. Due to its positive VCE(sat) temperature coefficient and tight parameter distribution, a safer paralleling operation can be achieved.