IXGA20N120A3

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IXGA20N120A3

Manufacturer part number:IXGA20N120A3

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(2+Tab) TO-263AA

Case Package:SOT-23

Datasheet:IXGA20N120A3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.59999g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	PURE TIN
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	180W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*20N120
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	180W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	40A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	66 ns
Test Condition	960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Turn Off Time-Nom (toff)	1530 ns
IGBT Type	PT
Gate Charge	50nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	16ns/290ns
Switching Energy	2.85mJ (on), 6.47mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free