FGH60T65SQD-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGH60T65SQD-F155 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Input Type
Standard
Power - Max
333W
Reverse Recovery Time
34.6ns
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
120A
Test Condition
400V, 15A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 60A
IGBT Type
Trench Field Stop
Gate Charge
79nC
Current - Collector Pulsed (Icm)
240A
Td (on/off) @ 25°C
20.8ns/102ns
Switching Energy
227μJ (on), 100μJ (off)
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.57000
$4.57
10
$4.12100
$41.21
450
$3.23576
$1456.092
900
$2.91813
$2626.317
1,350
$2.48352
$2.48352
FGH60T65SQD-F155 Product Details
FGH60T65SQD-F155 Description
FGH60T65SQD-F155 is a 650v IGBT. Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor FGH60T65SQD-F155 is in the TO-247-3LD package with 333W power dissipation.
FGH60T65SQD-F155 Features
Max Junction Temperature 175°C
Positive Temperature Co?efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 60 A