STGP4M65DF2 Description

This STGP4M65DF2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGP4M65DF2 is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VcE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation.

STGP4M65DF2 Features

6 μs of short-circuit withstand time

VcE(sat)= 1.6 V (typ.) @Ic=4A

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

STGP4M65DF2 Applications

Motor control

UPS

PFC