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STGW40H65FB

STGW40H65FB

STGW40H65FB

STMicroelectronics

STGW40H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGW40H65FB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 283W
Base Part Number STGW40
Element Configuration Single
Power Dissipation 283W
Input Type Standard
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 210nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 40ns/142ns
Switching Energy 498mJ (on), 363mJ (off)
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.36000 $6.36
30 $5.46233 $163.8699
120 $4.78825 $574.59
510 $4.13663 $2109.6813
1,020 $3.55240 $3.5524
2,520 $3.40260 $6.8052
STGW40H65FB Product Details

STGW40H65FB Description


The STGW40H65FB is an IGBT developed using an advanced proprietary trench gate field-stop structure. 



STGW40H65FB Features


  • Maximum junction temperature: TJ = 175 °C

  • High-speed switching series

  • Minimized tail current

  • Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A

  • Safe paralleling

  • Tight parameter distribution

  • Low thermal resistance



STGW40H65FB Applications


  • Photovoltaic inverters

  • High-frequency converters


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