STGB20H60DF

new-10%

Manufacturer part number:STGB20H60DF

Manufacturer:STMicroelectronics

Description:STGB20H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB20H60DF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	167W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGB20
Element Configuration	Single
Input Type	Standard
Power - Max	167W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	90 ns
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Test Condition	400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 20A
IGBT Type	Trench Field Stop
Gate Charge	115nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	42.5ns/177ns
Switching Energy	209μJ (on), 261μJ (off)
Gate-Emitter Voltage-Max	20V
Height	4.6mm
Length	10.4mm
Width	9.35mm
RoHS Status	ROHS3 Compliant