STGWA25H120F2                                  Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGWA25H120F2                                 Features

? Maximum junction temperature: TJ = 175 °C

? High speed switching series

? Minimized tail current

? VCE(sat) = 2.1 V (typ.) @ IC = 25 A

? 5 μs minimum short circuit withstand time at

TJ=150 °C

? Tight parameters distribution

? Safe paralleling

? Low thermal resistance

STGWA25H120F2                                 Applications

? Uninterruptible power supply

? Welding machines

? Photovoltaic inverters

? Power factor correction

? High frequency converters