STGW80H65DFB

new-10%

Manufacturer part number:STGW80H65DFB

Manufacturer:STMicroelectronics

Description:Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube

Case Package:SOT-23

Datasheet:STGW80H65DFB Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	469W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGW80
Element Configuration	Single
Input Type	Standard
Power - Max	469W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	120A
Reverse Recovery Time	85 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.6V
Test Condition	400V, 80A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 80A
IGBT Type	Trench Field Stop
Gate Charge	414nC
Current - Collector Pulsed (Icm)	240A
Td (on/off) @ 25°C	84ns/280ns
Switching Energy	2.1mJ (on), 1.5mJ (off)
Gate-Emitter Voltage-Max	20V
Height	20.15mm
Length	15.75mm
Width	5.15mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free