STN851-A Overview
This device has a DC current gain of 150 @ 2A 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 500mV @ 200mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.The part has a transition frequency of 130MHz.When collector current reaches its maximum, it can reach 5A volts.
STN851-A Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
STN851-A Applications
There are a lot of STMicroelectronics STN851-A applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
