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MMBT3904L RFG

MMBT3904L RFG

MMBT3904L RFG

Taiwan Semiconductor Corporation

MMBT3904L RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

MMBT3904L RFG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 300mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.048529 $0.048529
500 $0.035683 $17.8415
1000 $0.029736 $29.736
2000 $0.027281 $54.562
5000 $0.025496 $127.48
10000 $0.023717 $237.17
15000 $0.022937 $344.055
50000 $0.022553 $1127.65
MMBT3904L RFG Product Details

MMBT3904L RFG Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

MMBT3904L RFG Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA

MMBT3904L RFG Applications


There are a lot of Taiwan Semiconductor Corporation MMBT3904L RFG applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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