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CSD17381F4T

CSD17381F4T

CSD17381F4T

Texas Instruments

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 109m Ω @ 500mA, 8V 195pF @ 15V 1.35nC @ 4.5V 3-XFDFN

SOT-23

CSD17381F4T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FemtoFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17381
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 3.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 109m Ω @ 500mA, 8V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.1A Ta
Gate Charge (Qg) (Max) @ Vgs 1.35nC @ 4.5V
Rise Time 1.4ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 10.8 ns
Continuous Drain Current (ID) 3.1A
Threshold Voltage 850mV
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage 30V
Feedback Cap-Max (Crss) 2.9 pF
Height 350μm
Length 1.035mm
Width 635μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
250 $0.17400 $43.5
500 $0.14400 $72
750 $0.12000 $90
1,250 $0.10800 $0.108
CSD17381F4T Product Details

CSD17381F4T Description


The design and optimization of this 90 m, 30 V N-Channel FemtoFETTM MOSFET technology minimizes the footprint in numerous handheld and mobile applications. Standard tiny signal MOSFETs can be replaced with this technology, which also offers a footprint size reduction of at least 60%.



CSD17381F4T Feature


  • Ultra-low on-resistance

  • Ultra-low Qg and Qgd

  • Low threshold voltage

  • Ultra-small footprint (0402 case size): – 1.0 mm × 0.6 mm

  • Ultra-low profile: – 0.36 mm height

  • Integrated ESD protection diode

  • Lead and halogen free

  • RoHS compliant



CSD17381F4T Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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