CSD17381F4T

new-10%

Manufacturer part number:CSD17381F4T

Manufacturer:Texas Instruments

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 109m Ω @ 500mA, 8V 195pF @ 15V 1.35nC @ 4.5V 3-XFDFN

Case Package:SOT-23

Datasheet:CSD17381F4T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	FemtoFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD17381
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	3.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	109m Ω @ 500mA, 8V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	195pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.1A Ta
Gate Charge (Qg) (Max) @ Vgs	1.35nC @ 4.5V
Rise Time	1.4ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	10.8 ns
Continuous Drain Current (ID)	3.1A
Threshold Voltage	850mV
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.25Ohm
Drain to Source Breakdown Voltage	30V
Feedback Cap-Max (Crss)	2.9 pF
Height	350μm
Length	1.035mm
Width	635μm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free