CSD87312Q3E

new-10%

Manufacturer part number:CSD87312Q3E

Manufacturer:Texas Instruments

Description:CSD87312Q3E datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD87312Q3E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	NexFET™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Powers
Max Power Dissipation	2.5W
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD87312
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	7.8 ns
FET Type	2 N-Channel (Dual) Common Source
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	33m Ω @ 7A , 8V
Vgs(th) (Max) @ Id	1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1250pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 4.5V
Rise Time	16ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	2.8 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	27A
Gate to Source Voltage (Vgs)	10V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	45A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Feedback Cap-Max (Crss)	16 pF
Length	3.3mm
Width	3.3mm
Thickness	900μm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead