SSM6J215FE(TE85L,F Overview

The maximum input capacitance of this device is 630pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.4A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.5V 4.5V), this device helps reduce its power consumption.

SSM6J215FE(TE85L,F Features

a continuous drain current (ID) of 3.4A
a drain-to-source breakdown voltage of -20V voltage
a 20V drain to source voltage (Vdss)

SSM6J215FE(TE85L,F Applications

There are a lot of Toshiba Semiconductor and Storage
SSM6J215FE(TE85L,F applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,