SI3585CDV-T1-GE3

new-10%

SI3585CDV-T1-GE3

Manufacturer part number:SI3585CDV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20 Volts 3.9 Amps 1.4 Watts

Case Package:SOT-23

Datasheet:SI3585CDV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	19.986414mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	195mOhm
Subcategory	Other Transistors
Max Power Dissipation	1.3W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	3 ns
Power - Max	1.4W 1.3W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	58m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.9A 2.1A
Gate Charge (Qg) (Max) @ Vgs	4.8nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	7 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	2.1A
Threshold Voltage	1.5V
JEDEC-95 Code	MO-193AA
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	3.9A
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free