SI6473DQ-T1-GE3

new-10%

Manufacturer part number:SI6473DQ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 6.2A 8-TSSOP

Case Package:SOT-23

Datasheet:SI6473DQ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Supplier Device Package	8-TSSOP
Weight	157.991892mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	1.08W Ta
Element Configuration	Single
Turn On Delay Time	42 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	12.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	6.2A Ta
Gate Charge (Qg) (Max) @ Vgs	70nC @ 5V
Rise Time	33ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	95 ns
Turn-Off Delay Time	220 ns
Continuous Drain Current (ID)	6.2A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Drain to Source Resistance	12.5mOhm
Rds On Max	12.5 mΩ
Height	1mm
Length	3mm
Width	4.4mm
RoHS Status	ROHS3 Compliant