SI7232DN-T1-GE3

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Manufacturer part number:SI7232DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:SI7232DN-T1-GE3 Dual N-channel MOSFET Transistor; 24 A; 20V; 8-Pin PowerPAK 1212

Case Package:SOT-23

Datasheet:SI7232DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Max Power Dissipation	23W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI7232
Pin Count	8
JESD-30 Code	S-XDSO-C6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.6W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16.4m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1220pF @ 10V
Current - Continuous Drain (Id) @ 25°C	25A
Gate Charge (Qg) (Max) @ Vgs	32nC @ 8V
Rise Time	10ns
Fall Time (Typ)	10 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.0164Ohm
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	40A
Avalanche Energy Rating (Eas)	11 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.17mm
Length	3.05mm
Width	3.05mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free