SIA527DJ-T1-GE3

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Manufacturer part number:SIA527DJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 12V [email protected] 4.5A N-CH

Case Package:SOT-23

Datasheet:SIA527DJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	710μOhm
Max Power Dissipation	7.8W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Channels	2
Element Configuration	Dual
Turn On Delay Time	10 ns
FET Type	N and P-Channel
Rds On (Max) @ Id, Vgs	29m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Rise Time	10ns
Drain to Source Voltage (Vdss)	12V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	4.5A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	12V
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant