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SUP90P06-09L-E3

SUP90P06-09L-E3

SUP90P06-09L-E3

Vishay Siliconix

MOSFET (Metal Oxide) P-Channel Tube 9.3m Ω @ 30A, 10V ±20V 9200pF @ 25V 240nC @ 10V 60V TO-220-3

SOT-23

SUP90P06-09L-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchFET®
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 9.3mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 190ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 300 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 90A
Threshold Voltage -1V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 200A
Max Junction Temperature (Tj) 175°C
Height 19.31mm
Length 10.41mm
Width 4.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.834303 $4.834303
10 $4.560663 $45.60663
100 $4.302512 $430.2512
500 $4.058974 $2029.487
1000 $3.829220 $3829.22
SUP90P06-09L-E3 Product Details

SUP90P06-09L-E3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9200pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 90A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 140 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-1V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SUP90P06-09L-E3 Features


a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 200A.
a threshold voltage of -1V
a 60V drain to source voltage (Vdss)


SUP90P06-09L-E3 Applications


There are a lot of Vishay Siliconix
SUP90P06-09L-E3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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