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CEDM8001VL TR

CEDM8001VL TR

CEDM8001VL TR

Central Semiconductor

SOT-23

CEDM8001VL TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 3
Transistor Element Material SILICON
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.21.00.95
Terminal Position BOTTOM
Terminal Form NO LEAD
Reach Compliance Code compliant
JESD-30 Code R-PBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Drain Current-Max (Abs) (ID) 0.1A
Drain-source On Resistance-Max 12Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
CEDM8001VL TR Product Details

CEDM8001VL TR Overview


The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.1A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20V in order to maintain normal operation.

CEDM8001VL TR Features




CEDM8001VL TR Applications


There are a lot of Central Semiconductor
CEDM8001VL TR applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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