PBSS5250THR Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 130 @ 2A 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 200mA, 2A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

PBSS5250THR Features

the DC current gain for this device is 130 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A

PBSS5250THR Applications

There are a lot of Nexperia USA Inc. PBSS5250THR applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting