2SC6098-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC6098-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
800mW
Frequency
350MHz
Pin Count
3
Number of Elements
1
Power Dissipation
800mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
165mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
80V
Current - Collector (Ic) (Max)
2.5A
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
6.5V
hFE Min
300
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.808000
$0.808
10
$0.762264
$7.62264
100
$0.719117
$71.9117
500
$0.678412
$339.206
1000
$0.640012
$640.012
2SC6098-TL-E Product Details
2SC6098-TL-E Overview
This device has a DC current gain of 300 @ 100mA 5V, which is the ratio between the collector current and the base current.When VCE saturation is 165mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 6.5V, a high level of efficiency can be achieved.The maximum collector current is 2.5A volts.
2SC6098-TL-E Features
the DC current gain for this device is 300 @ 100mA 5V the vce saturation(Max) is 165mV @ 50mA, 1A the emitter base voltage is kept at 6.5V
2SC6098-TL-E Applications
There are a lot of ON Semiconductor 2SC6098-TL-E applications of single BJT transistors.