2SD1805F-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1805F-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
LIFETIME (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Subcategory
Other Transistors
Max Power Dissipation
1W
Frequency
120MHz
Base Part Number
2SD1805
Pin Count
3
Number of Elements
1
Configuration
Single
Power Dissipation
1W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 60mA, 3A
Collector Emitter Breakdown Voltage
20V
Current - Collector (Ic) (Max)
5A
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
160
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.977536
$0.977536
10
$0.922203
$9.22203
100
$0.870003
$87.0003
500
$0.820758
$410.379
1000
$0.774300
$774.3
2SD1805F-E Product Details
2SD1805F-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 500mA 2V.A VCE saturation (Max) of 500mV @ 60mA, 3A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 6V for high efficiency.Collector current can be as low as 5A volts at its maximum.
2SD1805F-E Features
the DC current gain for this device is 160 @ 500mA 2V the vce saturation(Max) is 500mV @ 60mA, 3A the emitter base voltage is kept at 6V
2SD1805F-E Applications
There are a lot of ON Semiconductor 2SD1805F-E applications of single BJT transistors.