2SC6097-TL-E Overview

In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV allows maximum design flexibility.When VCE saturation is 135mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6.5V.As you can see, the part has a transition frequency of 390MHz.The breakdown input voltage is 60V volts.Collector current can be as low as 3A volts at its maximum.

2SC6097-TL-E Features

the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 135mV @ 100mA, 1A
the emitter base voltage is kept at 6.5V
a transition frequency of 390MHz

2SC6097-TL-E Applications

There are a lot of ON Semiconductor 2SC6097-TL-E applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface