2N6041 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N6041 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Other Transistors
Terminal Position
SINGLE
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Power - Max
75W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A 4V
Current - Collector Cutoff (Max)
20μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2V @ 16mA, 4A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Transition Frequency
4MHz
Frequency - Transition
4MHz
Power Dissipation-Max (Abs)
75W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.03000
$3.03
500
$2.9997
$1499.85
1000
$2.9694
$2969.4
1500
$2.9391
$4408.65
2000
$2.9088
$5817.6
2500
$2.8785
$7196.25
2N6041 PBFREE Product Details
2N6041 PBFREE Overview
DC current gain in this device equals 1000 @ 4A 4V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 16mA, 4A.As you can see, the part has a transition frequency of 4MHz.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.
2N6041 PBFREE Features
the DC current gain for this device is 1000 @ 4A 4V the vce saturation(Max) is 2V @ 16mA, 4A a transition frequency of 4MHz
2N6041 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N6041 PBFREE applications of single BJT transistors.